Invention Grant
- Patent Title: Semiconductor integrated circuit
- Patent Title (中): 半导体集成电路
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Application No.: US13223930Application Date: 2011-09-01
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Publication No.: US08456892B2Publication Date: 2013-06-04
- Inventor: Shinichi Yasuda
- Applicant: Shinichi Yasuda
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Ohlandt, Greeley, Ruggiero and Perle, L.L.P.
- Priority: JP2010-219779 20100929
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C7/02

Abstract:
According to one embodiment, a semiconductor integrated circuit includes first and second resistance change type memory element and first and second switches. The first resistance change type memory element includes a first terminal connected to a first power supply and a second terminal connected to a first node. The second resistance change type memory element includes a third terminal connected to the first node and a fourth terminal connected to a second power supply. The first switch includes one end of a first current path connected to a first program power supply and the other end of the first current path connected to the first node. The second switch includes one end of a second current path connected to the first node and the other end of the second current path connected to a second program power supply.
Public/Granted literature
- US20120075910A1 SEMICONDUCTOR INTEGRATED CIRCUIT Public/Granted day:2012-03-29
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