Invention Grant
US08456893B2 Magnetic tunnel junction (MTJ) to reduce spin transfer magnetization switching current
有权
磁隧道结（MTJ）降低自旋转移磁化开关电流
- Patent Title: Magnetic tunnel junction (MTJ) to reduce spin transfer magnetization switching current
- Patent Title (中): 磁隧道结（MTJ）降低自旋转移磁化开关电流
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Application No.: US12584971Application Date: 2009-09-15
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Publication No.: US08456893B2Publication Date: 2013-06-04
- Inventor: Cheng T. Horng , Ru-Ying Tong
- Applicant: Cheng T. Horng , Ru-Ying Tong
- Applicant Address: US CA Milpitas
- Assignee: MagIC Technologies, Inc.
- Current Assignee: MagIC Technologies, Inc.
- Current Assignee Address: US CA Milpitas
- Agency: Saile Ackerman LLC
- Agent Stephen B. Ackerman
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A MTJ that minimizes spin-transfer magnetization switching current (Jc) in a Spin-RAM to
Public/Granted literature
- US20100009467A1 Novel magnetic tunnel junction (MTJ) to reduce spin transfer magnetization switching current Public/Granted day:2010-01-14
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