Invention Grant
US08456900B2 Memory devices and methods of operating the same 有权
内存设备及操作方法

Memory devices and methods of operating the same
Abstract:
A memory device includes a memory cell. The memory cell includes: a bipolar memory element and a bidirectional switching element. The bidirectional switching element is connected to ends of the bipolar memory element, and has a bidirectional switching characteristic. The bidirectional switching element includes: a first switching element and a second switching element. The first switching element is connected to a first end of the bipolar memory element and has a first switching direction. The second switching element is connected to a second end of the bipolar memory element and has a second switching direction. The second switching direction is opposite to the first switching direction.
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