Invention Grant
- Patent Title: Memory devices and methods of operating the same
- Patent Title (中): 内存设备及操作方法
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Application No.: US12926443Application Date: 2010-11-18
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Publication No.: US08456900B2Publication Date: 2013-06-04
- Inventor: Myoung-jae Lee , Dong-soo Lee , Chang-bum Lee , Seung-ryul Lee
- Applicant: Myoung-jae Lee , Dong-soo Lee , Chang-bum Lee , Seung-ryul Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2009-0131291 20091224
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
A memory device includes a memory cell. The memory cell includes: a bipolar memory element and a bidirectional switching element. The bidirectional switching element is connected to ends of the bipolar memory element, and has a bidirectional switching characteristic. The bidirectional switching element includes: a first switching element and a second switching element. The first switching element is connected to a first end of the bipolar memory element and has a first switching direction. The second switching element is connected to a second end of the bipolar memory element and has a second switching direction. The second switching direction is opposite to the first switching direction.
Public/Granted literature
- US20110161605A1 Memory devices and methods of operating the same Public/Granted day:2011-06-30
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