Invention Grant
- Patent Title: Spin-torque transfer magneto-resistive memory architecture
- Patent Title (中): 自旋扭矩传递磁阻存储器架构
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Application No.: US13559672Application Date: 2012-07-27
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Publication No.: US08456901B2Publication Date: 2013-06-04
- Inventor: John K. DeBrosse , Yutaka Nakamura
- Applicant: John K. DeBrosse , Yutaka Nakamura
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
A system includes a processor and a memory array connected to the processor comprising a first memory cell comprising a first magnetic tunnel junction device having a first terminal connected to a first bit line and a second terminal, and a first field effect transistor having a source terminal connected to a second bit line, a gate terminal connected to a word line, and a drain terminal connected to the second terminal of the first magnetic tunnel junction device, and a second memory cell comprising a second magnetic tunnel junction device having a first terminal connected to a third bit line and a second terminal, and a second field effect transistor having a source terminal connected to the second bit line, a gate terminal connected to the word line, and a drain terminal connected to the second terminal of the second magnetic tunnel junction device.
Public/Granted literature
- US20120294071A1 Spin-Torque Transfer Magneto-Resistive Memory Architecture Public/Granted day:2012-11-22
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