Invention Grant
US08456903B2 Magnetic memory with porous non-conductive current confinement layer
有权
具有多孔非导电电流限制层的磁记忆体
- Patent Title: Magnetic memory with porous non-conductive current confinement layer
- Patent Title (中): 具有多孔非导电电流限制层的磁记忆体
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Application No.: US12904254Application Date: 2010-10-14
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Publication No.: US08456903B2Publication Date: 2013-06-04
- Inventor: Michael Xuefei Tang , Ming Sun , Dimitar V. Dimitrov , Patrick Ryan
- Applicant: Michael Xuefei Tang , Ming Sun , Dimitar V. Dimitrov , Patrick Ryan
- Applicant Address: US CA Scotts Valley
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Scotts Valley
- Agency: Mueting Raasch & Gebhardt PA
- Main IPC: G11C11/15
- IPC: G11C11/15 ; G11C11/06 ; H01L21/00
Abstract:
A magnetic element having a ferromagnetic pinned layer, a ferromagnetic free layer, a non-magnetic spacer layer therebetween, and a porous non-electrically conducting current confinement layer between the free layer and the pinned layer. The current confinement layer forms an interface either between the free layer and the non-magnetic spacer layer or the pinned layer and the non-magnetic spacer layer.
Public/Granted literature
- US20110026321A1 MAGNETIC MEMORY WITH POROUS NON-CONDUCTIVE CURRENT CONFINEMENT LAYER Public/Granted day:2011-02-03
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