Invention Grant
US08456911B2 Intelligent shifting of read pass voltages for non-volatile storage
有权
用于非易失性存储的读通道电压的智能移位
- Patent Title: Intelligent shifting of read pass voltages for non-volatile storage
- Patent Title (中): 用于非易失性存储的读通道电压的智能移位
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Application No.: US13155323Application Date: 2011-06-07
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Publication No.: US08456911B2Publication Date: 2013-06-04
- Inventor: Jiahui Yuan , Yingda Dong , Charles Kwong
- Applicant: Jiahui Yuan , Yingda Dong , Charles Kwong
- Applicant Address: US TX Plano
- Assignee: SanDisk Technologies Inc.
- Current Assignee: SanDisk Technologies Inc.
- Current Assignee Address: US TX Plano
- Agency: Vierra Magen Marcus LLP
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
A first read pass voltage is determined and optimized for cycled memory. One or more starting read pass voltages are determined for one or more dies. The system dynamically calculates a current read pass voltage based on the number of program/erase erase cycles, the first read pass voltage and the respective starting read pass voltage. Data is read from one or more non-volatile storage elements using the calculated current read pass voltage.
Public/Granted literature
- US20120314499A1 INTELLIGENT SHIFTING OF READ PASS VOLTAGES FOR NON-VOLATILE STORAGE Public/Granted day:2012-12-13
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