Invention Grant
US08456913B2 Semiconductor memory apparatus and method for controlling programming current pulse
有权
用于控制编程电流脉冲的半导体存储装置和方法
- Patent Title: Semiconductor memory apparatus and method for controlling programming current pulse
- Patent Title (中): 用于控制编程电流脉冲的半导体存储装置和方法
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Application No.: US12983050Application Date: 2010-12-31
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Publication No.: US08456913B2Publication Date: 2013-06-04
- Inventor: Yong Bok An
- Applicant: Yong Bok An
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Patent Ltd.
- Priority: KR10-2010-0086397 20100903
- Main IPC: G11C7/00
- IPC: G11C7/00
Abstract:
A semiconductor memory apparatus includes a write control code generation unit configured to generate a write control code which is updated at each pulsing timing of an external test pulse signal applied through a pad; and a data write unit configured to output a programming current pulse which has a magnitude corresponding to the code value of the write control code.
Public/Granted literature
- US20120057417A1 SEMICONDUCTOR MEMORY APPARATUS AND METHOD FOR CONTROLLING PROGRAMMING CURRENT PULSE Public/Granted day:2012-03-08
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