Invention Grant
- Patent Title: Memory device with multiple planes
- Patent Title (中): 具有多个平面的内存设备
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Application No.: US13041907Application Date: 2011-03-07
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Publication No.: US08456914B2Publication Date: 2013-06-04
- Inventor: Chiara Missiroli , Stefano Sivero , Nicola Maglione
- Applicant: Chiara Missiroli , Stefano Sivero , Nicola Maglione
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Morrison & Foerster LLP
- Main IPC: G11C11/34
- IPC: G11C11/34

Abstract:
Disclosed herein is a device that includes at least one selection/non-selection voltage receiving line, at least one word line operatively coupled to the selection/non-selection voltage receiving line, and a plurality of memory cells coupled to the word line; a selection voltage source line; and a selection voltage supply circuit comprising a first switch circuit and a first driver circuit driving the first switch circuit to be turned ON or OFF, the first switch circuit including a first node coupled to the selection voltage source line, a second node coupled to the selection/non-selection voltage receiving line of the first memory plane and a third node coupled to the selection/non-selection voltage receiving line of the second memory plane, and the first driver circuit being provided in common to the first and second memory planes.
Public/Granted literature
- US20120230108A1 MEMORY DEVICE WITH MULTIPLE PLANES Public/Granted day:2012-09-13
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