Invention Grant
- Patent Title: Memory write error correction circuit
- Patent Title (中): 内存写错误纠正电路
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Application No.: US13013616Application Date: 2011-01-25
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Publication No.: US08456926B2Publication Date: 2013-06-04
- Inventor: Adrian E. Ong , Vladimir Nitikin
- Applicant: Adrian E. Ong , Vladimir Nitikin
- Applicant Address: US CA Milpitas
- Assignee: Grandis, Inc.
- Current Assignee: Grandis, Inc.
- Current Assignee Address: US CA Milpitas
- Agency: Renaissance IP Law Group LLP
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C8/00 ; G11C11/00

Abstract:
Memory circuit includes; an array, row decoder, column decoder, addressing circuit to receive an address of the data bit, control logic receiving commands and transmitting control signals to memory system blocks, and sensing and write driver circuits coupled to a selected column. A hidden read compare circuit couples between the sensing circuit and write driver, which couples an error flag to the control logic circuit responsive to a comparison between a data bit in the input latch and a data-out read from the memory array. A write error address tag memory is responsive to the error flag and is coupled to the addressing circuit via a bidirectional bus. A data input output circuit having first and second bidirectional buses to transmit and receive said data bit is provided. Write error address tag memory stores the address if the error flag is set and provides the address during a re-write operation.
Public/Granted literature
- US20120127804A1 Memory Write Error Correction Circuit Public/Granted day:2012-05-24
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