Invention Grant
- Patent Title: Page buffer circuit
- Patent Title (中): 页缓冲电路
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Application No.: US13166008Application Date: 2011-06-22
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Publication No.: US08456927B2Publication Date: 2013-06-04
- Inventor: Byoung Young Kim
- Applicant: Byoung Young Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Patent Ltd.
- Priority: KR10-2010-0132003 20101221
- Main IPC: G11C7/10
- IPC: G11C7/10

Abstract:
A page buffer circuit includes: a main latch unit configured to have a main latch value which is dependent on a sub latch output signal, and output the main latch value to a first node; a sub latch unit configured to latch a voltage of a second node as a sub latch value in response to a storage enable signal, and generate the sub latch output signal according to the sub latch value when an output enable signal is activated; and a voltage determination unit connected between the first node and the second node, and configured to electrically connect or disconnect the first node to or from the second node in response to the storage enable signal, and determine a voltage level of the second node in response to the storage enable signal.
Public/Granted literature
- US20120155190A1 PAGE BUFFER CIRCUIT Public/Granted day:2012-06-21
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