Invention Grant
US08456933B2 Semiconductor memory apparatus and method for generating programming current pulse
有权
用于产生编程电流脉冲的半导体存储装置和方法
- Patent Title: Semiconductor memory apparatus and method for generating programming current pulse
- Patent Title (中): 用于产生编程电流脉冲的半导体存储装置和方法
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Application No.: US12983058Application Date: 2010-12-31
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Publication No.: US08456933B2Publication Date: 2013-06-04
- Inventor: Yong Bok An
- Applicant: Yong Bok An
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Patent Ltd.
- Priority: KR10-2010-0038323 20100426
- Main IPC: G11C7/00
- IPC: G11C7/00
Abstract:
A semiconductor apparatus includes a first write control code generation unit configured to generate first write control codes which have fixed value for a first time and are cyclically updated after the first time, a second write control code generation unit configured to generate a second write control code, and a data write unit configured to output a first programming current pulse in response to the first write control codes, or a second programming current pulse in response to the second write control code.
Public/Granted literature
- US20110261612A1 SEMICONDUCTOR MEMORY APPARATUS AND METHOD FOR GENERATING PROGRAMMING CURRENT PULSE Public/Granted day:2011-10-27
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