Invention Grant
US08456947B2 Integrated circuitry, switches, and methods of selecting memory cells of a memory device
有权
集成电路，开关和选择存储器件的存储单元的方法
- Patent Title: Integrated circuitry, switches, and methods of selecting memory cells of a memory device
- Patent Title (中): 集成电路，开关和选择存储器件的存储单元的方法
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Application No.: US13050630Application Date: 2011-03-17
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Publication No.: US08456947B2Publication Date: 2013-06-04
- Inventor: Gurtej S. Sandhu
- Applicant: Gurtej S. Sandhu
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: G11C5/12
- IPC: G11C5/12 ; H01H36/00
Abstract:
Some embodiments include switches that have a graphene structure connected to a pair of spaced-apart electrodes. The switches may further include first and second electrically conductive structures on opposing sides of the graphene structure from one another. The first structure may extend from one of the electrodes, and the second structure may extend from the other of the electrodes. Some embodiments include the above-described switches utilized as select devices in memory devices. Some embodiments include methods of selecting memory cells.
Public/Granted literature
- US20120230128A1 Integrated Circuitry, Switches, and Methods of Selecting Memory Cells of a Memory Device Public/Granted day:2012-09-13
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