Invention Grant
- Patent Title: Semiconductor optical element
- Patent Title (中): 半导体光学元件
-
Application No.: US12690950Application Date: 2010-01-21
-
Publication No.: US08457451B2Publication Date: 2013-06-04
- Inventor: Takeshi Yamatoya , Yoshimichi Morita , Chikara Watatani
- Applicant: Takeshi Yamatoya , Yoshimichi Morita , Chikara Watatani
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Leydig, Voit & Mayer, Ltd.
- Priority: JP2009-108030 20090427
- Main IPC: G02B6/12
- IPC: G02B6/12
Abstract:
A semiconductor optical element having a mesa structure formed by wet etching, includes a mesa structure having a ridge-type mesa structure or a high-mesa-type mesa structure, the mesa structure being disposed on a semiconductor substrate, and an extended mesa on the semiconductor substrate, the extended mesa being connected to a corner of the mesa structure and being the same material as the mesa structure.
Public/Granted literature
- US20100272389A1 SEMICONDUCTOR OPTICAL ELEMENT AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2010-10-28
Information query
