Invention Grant
US08457499B2 Semiconductor laser drive device, semiconductor laser drive method, light transmission device, optical wiring module, and electronic device
失效
半导体激光驱动装置,半导体激光驱动方法,光传输装置,光配线模块和电子装置
- Patent Title: Semiconductor laser drive device, semiconductor laser drive method, light transmission device, optical wiring module, and electronic device
- Patent Title (中): 半导体激光驱动装置,半导体激光驱动方法,光传输装置,光配线模块和电子装置
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Application No.: US12672763Application Date: 2008-08-08
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Publication No.: US08457499B2Publication Date: 2013-06-04
- Inventor: Kentaro Hamana , Akira Enami , Yukari Terakawa , Keisuke Uno , Hayami Hosokawa
- Applicant: Kentaro Hamana , Akira Enami , Yukari Terakawa , Keisuke Uno , Hayami Hosokawa
- Applicant Address: JP Kyoto
- Assignee: OMRON Corporation
- Current Assignee: OMRON Corporation
- Current Assignee Address: JP Kyoto
- Agency: Osha Liang LLP
- Priority: JP2007-210807 20070813
- International Application: PCT/JP2008/064315 WO 20080808
- International Announcement: WO2009/022651 WO 20090219
- Main IPC: H04B10/12
- IPC: H04B10/12 ; H01S3/13 ; H01S3/00

Abstract:
A semiconductor laser drive apparatus comprises a bias current setting section (232) which sets a bias current value on the basis of the drive temperature so that the temperature characteristic of the bias current value with respect to the drive temperature may be a linear function having a slope except zero and a drive current setting section (233) for setting the drive current value on the basis of the drive temperature so that the temperature characteristic of the drive current value with respect to the drive temperature may be a function having a slope except zero. The temperature characteristic of the bias current and that of the drive current are functions different from each other. With this, low cost, space-saving, and power-saving of a semiconductor laser are achieved, and a semiconductor laser drive apparatus enabling a good transmission characteristic on the reception side and a high optical output over the whole drive temperature range when driving the semiconductor laser can be provided.
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