Invention Grant
- Patent Title: Secondary memory element for non-volatile memory
- Patent Title (中): 用于非易失性存储器的辅助存储器元件
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Application No.: US12346015Application Date: 2008-12-30
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Publication No.: US08458562B1Publication Date: 2013-06-04
- Inventor: Giovanni Campardo , Stefano Corno , Gian Pietro Vanalli , Manuela Scognamiglio , Danilo Caraccio , Federico Tiziani , Massimiliano Magni , Andrea Ghilardelli
- Applicant: Giovanni Campardo , Stefano Corno , Gian Pietro Vanalli , Manuela Scognamiglio , Danilo Caraccio , Federico Tiziani , Massimiliano Magni , Andrea Ghilardelli
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Knobbe, Martens, Olson & Bear LLP
- Main IPC: G11C29/42
- IPC: G11C29/42 ; G11C29/54
Abstract:
Embodiments for providing improved reliability or extended life for a non-volatile memory component may comprise a secondary non-volatile memory component to store error correction information, for example.
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