Invention Grant
US08458627B2 Semiconductor device including logic circuit having areas of different optical proximity accuracy
有权
包括具有不同光学接近精度的区域的逻辑电路的半导体器件
- Patent Title: Semiconductor device including logic circuit having areas of different optical proximity accuracy
- Patent Title (中): 包括具有不同光学接近精度的区域的逻辑电路的半导体器件
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Application No.: US13333577Application Date: 2011-12-21
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Publication No.: US08458627B2Publication Date: 2013-06-04
- Inventor: Hironobu Taoka , Yusaku Ono
- Applicant: Hironobu Taoka , Yusaku Ono
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: McDermott Will & Emery LLP
- Priority: JP2005-127798 20050426
- Main IPC: G06F17/50
- IPC: G06F17/50 ; H01L27/118 ; H01L25/00 ; H03K19/173

Abstract:
An object of the present invention is to reduce processing time and manufacturing cost for a semiconductor device including a logic circuit. To accomplish the above object, an area (114) for forming a logic circuit includes a first area (114b, 170) which is subjected to optical proximity correction with predetermined accuracy, and a second area (114a, 180) which is subjected to optical proximity correction with accuracy lower than said predetermined accuracy. Especially, the first area (114b, 170) includes a gate interconnection line (172) which acts as a transistor, and the second area (114a, 180) includes a dummy layout pattern (182) which does not act as a transistor.
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