Method of cleaning semiconductor wafers

Invention Grant

US08460474B2 Method of cleaning semiconductor wafers 有权

Title translation: 清洗半导体晶圆的方法

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Patent Title: Method of cleaning semiconductor wafers
Patent Title (中): 清洗半导体晶圆的方法
Application No.: US12657095

Application Date: 2010-01-13
Publication No.: US08460474B2

Publication Date: 2013-06-11
Inventor: Robert K. Barr , Raymond Chan , Matthew L. Moynihan
Applicant: Robert K. Barr , Raymond Chan , Matthew L. Moynihan
Applicant Address: US MA Marlborough
Assignee: Rohm and Haas Electronic Materials LLC
Current Assignee: Rohm and Haas Electronic Materials LLC
Current Assignee Address: US MA Marlborough
Agent John J. Piskorski
Main IPC: H01L21/465
IPC: H01L21/465

Abstract:

A method of cleaning semiconductor wafers using an acid cleaner followed by an alkaline cleaner to clean contaminants from the materials is provided. The acid cleaner removes substantially all of the metal contaminants while the alkaline cleaner removes substantially all of the non-metal contaminants, such as organics and particulate material.

Abstract(Chinese):

提供了一种使用酸性清洁剂和碱性清洁剂清洁半导体晶片以从材料中清除污染物的方法。酸性清洁剂基本上除去所有金属污染物，而碱性清洁剂基本上除去了所有非金属污染物，例如有机物和颗粒物质。

Public/Granted literature

US20100248494A1 Method of cleaning semiconductor wafers Public/Granted day:2010-09-30

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/465	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/469）