Invention Grant
US08460508B2 Synchronous pulse plasma etching equipment and method of fabricating a semiconductor device
有权
同步脉冲等离子体蚀刻设备及制造半导体器件的方法
- Patent Title: Synchronous pulse plasma etching equipment and method of fabricating a semiconductor device
- Patent Title (中): 同步脉冲等离子体蚀刻设备及制造半导体器件的方法
-
Application No.: US12591602Application Date: 2009-11-24
-
Publication No.: US08460508B2Publication Date: 2013-06-11
- Inventor: Ken Tokashiki , Hong Cho , Jeong-Dong Choe
- Applicant: Ken Tokashiki , Hong Cho , Jeong-Dong Choe
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2008-0117111 20081124
- Main IPC: H01L21/3065
- IPC: H01L21/3065 ; H01L21/302 ; C23C16/00 ; C23C16/50 ; C23C16/52

Abstract:
Synchronous pulse plasma etching equipment includes a first electrode and one or more second electrodes configured to generate plasma in a plasma etching chamber. A first radio frequency power output unit is configured to apply a first radio frequency power having a first frequency and a first duty ratio to the first electrode, and to output a control signal including information about a phase of the first radio frequency power. At least one second radio frequency power output unit is configured to apply a second radio frequency power having a second frequency and a second duty ratio to a corresponding second electrode among the second electrodes. The second radio frequency power output unit is configured to control the second radio frequency power to be synchronized with the first radio frequency power or to have a phase difference from the first radio frequency power in response to the control signal.
Public/Granted literature
- US20100130018A1 Synchronous pulse plasma etching equipment and method of fabricating a semiconductor device Public/Granted day:2010-05-27
Information query
IPC分类: