Invention Grant
- Patent Title: Method of manufacturing quantum dot
- Patent Title (中): 量子点制造方法
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Application No.: US12907743Application Date: 2010-10-19
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Publication No.: US08460632B2Publication Date: 2013-06-11
- Inventor: Jong Hyuk Kang , Junghan Shin , Jae Byung Park , Dong-Hoon Lee , Minki Nam , Kookheon Char , Seonghoon Lee , WanKi Bae , Jaehoon Lim , Joohyun Jung
- Applicant: Jong Hyuk Kang , Junghan Shin , Jae Byung Park , Dong-Hoon Lee , Minki Nam , Kookheon Char , Seonghoon Lee , WanKi Bae , Jaehoon Lim , Joohyun Jung
- Applicant Address: KR KR
- Assignee: Samsung Display Co., Ltd.,SNU R&DB Foundation
- Current Assignee: Samsung Display Co., Ltd.,SNU R&DB Foundation
- Current Assignee Address: KR KR
- Agency: Cantor Colburn LLP
- Main IPC: H01M4/58
- IPC: H01M4/58

Abstract:
A method of manufacturing a quantum dot, the method including: mixing of a Group II precursor and a Group III precursor in a solvent to prepare a first mixture; heating the first mixture at a temperature of about 200° C. to about 350° C.; adding a Group V precursor and a Group VI precursor to the first mixture while maintaining the first mixture at the temperature of about 200° C. to about 350° C. to prepare a second mixture; and maintaining the second mixture at the temperature of about 200° C. to about 350° C. to form a quantum dot.
Public/Granted literature
- US20110227007A1 METHOD OF MANUFACTURING QUANTUM DOT Public/Granted day:2011-09-22
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