Invention Grant
- Patent Title: Material and method for photolithography
- Patent Title (中): 光刻材料和方法
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Application No.: US13238335Application Date: 2011-09-21
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Publication No.: US08460856B2Publication Date: 2013-06-11
- Inventor: Hsiao-Wei Yeh , Jen-Chieh Shih , Jian-Hong Chen
- Applicant: Hsiao-Wei Yeh , Jen-Chieh Shih , Jian-Hong Chen
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F7/20
- IPC: G03F7/20 ; G03F7/30 ; G03F7/38 ; G03F7/09
Abstract:
A photosensitive material for use in semiconductor manufacture comprises a copolymer that includes a plurality of photoresist chains and a plurality of hydrophobic chains, each hydrophobic chain attached to the end of one of the photoresist chains. The copolymer in response to externally applied energy will self-assemble to a photoresist layer and a hydrophobic layer.
Public/Granted literature
- US20120009524A1 MATERIAL AND METHOD FOR PHOTOLITHOGRAPHY Public/Granted day:2012-01-12
Information query
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