Invention Grant
- Patent Title: Optical semiconductor device, method for manufacturing optical semiconductor device, and method for manufacturing optical semiconductor apparatus
- Patent Title (中): 光半导体装置,光半导体装置的制造方法以及光半导体装置的制造方法
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Application No.: US12911022Application Date: 2010-10-25
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Publication No.: US08460957B2Publication Date: 2013-06-11
- Inventor: Tatsuma Saito , Yusuke Yokobayashi
- Applicant: Tatsuma Saito , Yusuke Yokobayashi
- Applicant Address: JP Tokyo
- Assignee: Stanley Electric Co., Ltd.
- Current Assignee: Stanley Electric Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz, Goodman & Chick, P.C.
- Priority: JP2009-244320 20091023
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A method for manufacturing a high quality optical semiconductor device includes: (a) preparing a growth substrate; (b) forming a semiconductor layer on the growth substrate; (c) forming a metal support made of copper on the semiconductor layer by plating; (d) separating the growth substrate from the semiconductor layer to remove the growth substrate; and (e) carrying out a thermal treatment in order to even density distributions of crystal grains and voids in the copper forming the metal support.
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