Invention Grant
- Patent Title: Method for producing an array of thin-film photovoltaic cells having a totally separated integrated bypass diode and method for producing a panel incorporating the same
- Patent Title (中): 具有全分离的集成旁路二极管的薄膜光伏电池阵列的制造方法及其制造方法
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Application No.: US13297601Application Date: 2011-11-16
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Publication No.: US08460964B2Publication Date: 2013-06-11
- Inventor: Meijun Lu , Lap-Tak Andrew Cheng
- Applicant: Meijun Lu , Lap-Tak Andrew Cheng
- Applicant Address: US DE Wilmington
- Assignee: E I du Pont de Nemours and Company
- Current Assignee: E I du Pont de Nemours and Company
- Current Assignee Address: US DE Wilmington
- Main IPC: H01L31/068
- IPC: H01L31/068
Abstract:
A method for producing a thin-film solar cell with a cell level integrated bypass diode includes forming at least three series-connected solar cells, each cell being a laminated structure including semiconducting material of first and second types, a front electrode in contact with the material of the first type, and a back electrode in contact with the material of the second type. The bypass diode is formed by total separation from a selected parent cell. The material of the first type of the diode is connected to the material of the second type of any one chosen solar cell in the array. The material of the second type of the diode is connected with the material of the first type of the one chosen solar cell in the array so that the diode is connected in parallel and in opposition to the one chosen solar cell.
Public/Granted literature
Information query
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