Invention Grant
- Patent Title: Manufacturing method for array substrate with fringe field switching type thin film transistor liquid crystal display
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Application No.: US13499353Application Date: 2011-04-26
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Publication No.: US08460982B2Publication Date: 2013-06-11
- Inventor: Youngsuk Song , Seungjin Choi , Seongyeol Yoo
- Applicant: Youngsuk Song , Seungjin Choi , Seongyeol Yoo
- Applicant Address: CN Beijing
- Assignee: Beijing Boe Optoelectronics Technology Co., Ltd.
- Current Assignee: Beijing Boe Optoelectronics Technology Co., Ltd.
- Current Assignee Address: CN Beijing
- Agency: Ladas & Parry LLP
- Priority: CN201010159005 20100426
- International Application: PCT/CN2011/073336 WO 20110426
- International Announcement: WO2011/134390 WO 20111103
- Main IPC: H01L21/84
- IPC: H01L21/84

Abstract:
A manufacturing method for an array substrate with a fringe field switching (FFS) type thin film transistor (TFT) liquid crystal display (LCD) includes the following steps. A pattern of a gate line (1), a gate electrode, a common electrode (6) and a common electrode line (5) is formed by patterning a first transparent conductive film and a first metal film formed successively on a transparent substrate. Contact holes of the gate line in the pad area and a semiconductor pattern are formed through a patterning process after a gate insulator film, and a semiconductor film and a doped semiconductor film are formed successively. A second metal film is deposited and patterned. A second transparent conductive film is deposited and a lift-off process is performed. And then, a pattern of a source electrode, a drain electrode, a TFT channel and a pixel electrode (4) is formed by etching the exposed second metal film and the doped semiconductor film.
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