Invention Grant
- Patent Title: Method of manufacturing semiconductor for transistor and method of manufacturing the transistor
- Patent Title (中): 晶体管半导体的制造方法及晶体管的制造方法
-
Application No.: US12829977Application Date: 2010-07-02
-
Publication No.: US08460985B2Publication Date: 2013-06-11
- Inventor: Bo-Kyoung Ahn , Seon-Pil Jang , Gug-Rae Jo , Hong-Suk Yoo , Chang-Hoon Kim , Min-Uk Kim , Ju-Han Bae
- Applicant: Bo-Kyoung Ahn , Seon-Pil Jang , Gug-Rae Jo , Hong-Suk Yoo , Chang-Hoon Kim , Min-Uk Kim , Ju-Han Bae
- Applicant Address: KR Yongin
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Yongin
- Agency: H.C. Park & Associates, PLC
- Priority: KR10-2009-0112818 20091120
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A method of manufacturing a semiconductor for a transistor that includes forming a precursor layer by coating a surface of an insulation substrate with a precursor solution for an oxide semiconductor, forming an oxide semiconductor by oxidizing a portion of the precursor layer, and removing a remaining precursor layer except for the oxide semiconductor.
Public/Granted literature
- US20110124152A1 METHOD OF MANUFACTURING SEMICONDUCTOR FOR TRANSISTOR AND METHOD OF MANUFACTURING THE TRANSISTOR Public/Granted day:2011-05-26
Information query
IPC分类:
