Invention Grant
- Patent Title: Niobium and vanadium organometallic precursors for thin film deposition
- Patent Title (中): 铌和钒有机金属前体用于薄膜沉积
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Application No.: US13123013Application Date: 2009-10-06
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Publication No.: US08460989B2Publication Date: 2013-06-11
- Inventor: Nicolas Blasco , Anthony Correia-Anacleto , Audrey Pinchart , Andreas Zauner
- Applicant: Nicolas Blasco , Anthony Correia-Anacleto , Audrey Pinchart , Andreas Zauner
- Applicant Address: FR Paris
- Assignee: L'Air Liquide Societe Anonyme pour l'Etude et l'Exploitation des Procedes
- Current Assignee: L'Air Liquide Societe Anonyme pour l'Etude et l'Exploitation des Procedes
- Current Assignee Address: FR Paris
- Agent Patricia E. McQueeney
- Priority: EP08305649 20081007
- International Application: PCT/EP2009/062964 WO 20091006
- International Announcement: WO2010/040741 WO 20100415
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L21/4763 ; C23C16/00 ; C07F9/00
Abstract:
Disclosed are methods for forming a metal-containing layer on a substrate. A vapor comprising at least one precursor compound selected from the group consisting of (Cp)V(=NtBu)(NEt2)2; (Cp)V(=NtBu)(NMe2)2; (Cp)V(=NtBu)(NEtMe)2; (Cp)V(═NiPr)(NEt2)2; (Cp)V(═NiPr)(NMe2)2; (Cp)V(═NiPr)(NEtMe)2; (Cp)V(═NC5H11)(NEt2)2; (Cp)V(═NC5H11)(NMe2)2; (Cp)V(═NC5H11)(NEtMe)2; (Cp)Nb(=NtBu)(NEt2)2; (Cp)Nb(=NtBu)(NMe2)2; (Cp)Nb(=NtBu)(NEtMe)2; (Cp)Nb(═NiPr)(NEt2)2; (Cp)Nb(═NiPr)(NMe2)2; (Cp)Nb(═NiPr)(NEtMe)2; (Cp)Nb(═NC5H11)(NEt2)2; (Cp)Nb(═NC5H11)(NMe2)2; and (Cp)Nb(═NC5H11)(NEtMe)2 is provided. At least one reaction gas selected from the group consisting of ozone and water is provided. The vapor and the reaction gas react with the substrate according to a deposition process to form the metal-containing layer on at least one surface of the substrate.
Public/Granted literature
- US20110195574A1 NIOBIUM AND VANADIUM ORGANOMETALLIC PRECURSORS FOR THIN FILM DEPOSITION Public/Granted day:2011-08-11
Information query
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