Semiconductor devices with different dielectric thicknesses

Invention Grant

US08460996B2 Semiconductor devices with different dielectric thicknesses 有权

Title translation: 具有不同介电厚度的半导体器件

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Patent Title: Semiconductor devices with different dielectric thicknesses
Patent Title (中): 具有不同介电厚度的半导体器件
Application No.: US11931565

Application Date: 2007-10-31
Publication No.: US08460996B2

Publication Date: 2013-06-11
Inventor: Gauri V. Karve , Mark D. Hall , Srikanth B. Samavedam
Applicant: Gauri V. Karve , Mark D. Hall , Srikanth B. Samavedam
Applicant Address: US TX Austin
Assignee: Freescale Semiconductor, Inc.
Current Assignee: Freescale Semiconductor, Inc.
Current Assignee Address: US TX Austin
Agent David G. Dolezal
Main IPC: H01L21/8242
IPC: H01L21/8242

Semiconductor devices with different dielectric thicknesses

Abstract:

An integrated circuit with devices having dielectric layers with different thicknesses. The dielectric layers include a high-k dielectric and some of the dielectric layers include an oxide layer that is formed from an oxidation process. Each device includes a layer including germanium or carbon located underneath the electrode stack of the device. A silicon cap layers is located over the layer including germanium or carbon.

Abstract(Chinese):

具有具有不同厚度的电介质层的器件的集成电路。电介质层包括高k电介质，并且一些电介质层包括由氧化工艺形成的氧化物层。每个器件包括位于器件的电极堆叠下方的包含锗或碳的层。硅层位于包含锗或碳的层之上。

Public/Granted literature

US20090108296A1 SEMICONDUCTOR DEVICES WITH DIFFERENT DIELECTRIC THICKNESSES Public/Granted day:2009-04-30

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8239	........存储器结构
H01L21/8242	.........动态随机存取存储结构（DRAM）