Invention Grant
US08461017B2 Methods of forming bonded semiconductor structures using a temporary carrier having a weakened ion implant region for subsequent separation along the weakened region
有权
使用具有弱化离子注入区域的临时载体形成键合的半导体结构的方法，用于随后沿弱化区域分离
- Patent Title: Methods of forming bonded semiconductor structures using a temporary carrier having a weakened ion implant region for subsequent separation along the weakened region
- Patent Title (中): 使用具有弱化离子注入区域的临时载体形成键合的半导体结构的方法，用于随后沿弱化区域分离
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Application No.: US12839203Application Date: 2010-07-19
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Publication No.: US08461017B2Publication Date: 2013-06-11
- Inventor: Mariam Sadaka , Ionut Radu
- Applicant: Mariam Sadaka , Ionut Radu
- Applicant Address: FR Bernin
- Assignee: Soitec
- Current Assignee: Soitec
- Current Assignee Address: FR Bernin
- Agency: TraskBritt
- Main IPC: H01L21/30
- IPC: H01L21/30
Abstract:
Methods of fabricating semiconductor structures include implanting atom species into a carrier die or wafer to form a weakened region within the carrier die or wafer, and bonding the carrier die or wafer to a semiconductor structure. The semiconductor structure may be processed while using the carrier die or wafer to handle the semiconductor structure. The semiconductor structure may be bonded to another semiconductor structure, and the carrier die or wafer may be divided along the weakened region therein. Bonded semiconductor structures are fabricated using such methods.
Public/Granted literature
- US20120013013A1 TEMPORARY SEMICONDUCTOR STRUCTURE BONDING METHODS AND RELATED BONDED SEMICONDUCTOR STRUCTURES Public/Granted day:2012-01-19
Information query
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