Invention Grant
US08461027B2 Method for producing nanostructures on metal oxide substrate, method for depositing thin film on same, and thin film device
有权
在金属氧化物基板上制造纳米结构的方法,其上沉积薄膜的方法和薄膜装置
- Patent Title: Method for producing nanostructures on metal oxide substrate, method for depositing thin film on same, and thin film device
- Patent Title (中): 在金属氧化物基板上制造纳米结构的方法,其上沉积薄膜的方法和薄膜装置
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Application No.: US12933442Application Date: 2009-03-19
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Publication No.: US08461027B2Publication Date: 2013-06-11
- Inventor: Pierre-Jean Alet , Pere Roca I Cabaroccas
- Applicant: Pierre-Jean Alet , Pere Roca I Cabaroccas
- Applicant Address: FR Palaiseau FR Paris FR Paris
- Assignee: Ecole Polytechnique,Centre National de la Recherche Scientifique,Commissariat a l'Energie Atomique—CEA
- Current Assignee: Ecole Polytechnique,Centre National de la Recherche Scientifique,Commissariat a l'Energie Atomique—CEA
- Current Assignee Address: FR Palaiseau FR Paris FR Paris
- Agency: Young & Thompson
- Priority: FR0851817 20080320
- International Application: PCT/FR2009/050470 WO 20090319
- International Announcement: WO2009/122113 WO 20091008
- Main IPC: H01L21/20
- IPC: H01L21/20

Abstract:
A method for producing nanostructures on a metal oxide substrate includes the following steps: a) forming metal aggregates on the metal oxide substrate; and b) vapor phase growing nanostructures on the metal oxide substrate covered with metal aggregates, the substrate being heated in the presence of one or more precursor gases, and the vapor phase growth of nanostructures being catalyzed by the metal aggregates. The metal aggregate formation stage a) includes an operation for reducing the surface of the metal oxide substrate by reductive plasma treatment, causing droplets of metal aggregates to form on the substrate, the metal aggregate formation stage a) and the nanostructure growth stage b) being carried out in series in a single shared plasma reactor chamber, the nanostructure growth being directly carried out on the droplets of metal aggregates.
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