Batch CVD method and apparatus for semiconductor process

Invention Grant

US08461059B2 Batch CVD method and apparatus for semiconductor process 有权

Title translation: 分批CVD法和半导体工艺装置

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Patent Title: Batch CVD method and apparatus for semiconductor process
Patent Title (中): 分批CVD法和半导体工艺装置
Application No.: US12838911

Application Date: 2010-07-19
Publication No.: US08461059B2

Publication Date: 2013-06-11
Inventor: Toshiyuki Ikeuchi , Masayuki Hasegawa , Toshihiko Takahashi , Keisuke Suzuki
Applicant: Toshiyuki Ikeuchi , Masayuki Hasegawa , Toshihiko Takahashi , Keisuke Suzuki
Applicant Address: JP Tokyo
Assignee: Tokyo Electron Limited
Current Assignee: Tokyo Electron Limited
Current Assignee Address: JP Tokyo
Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
Priority: JP2009-171557 20090722
Main IPC: H01L21/473
IPC: H01L21/473

Batch CVD method and apparatus for semiconductor process

Abstract:

A batch CVD method repeats a cycle including adsorption and reaction steps along with a step of removing residual gas. The adsorption step is preformed while supplying the source gas into the process container by first setting the source gas valve open for a first period and then setting the source gas valve closed, without supplying the reactive gas into the process container by keeping the reactive gas valve closed, and without exhausting gas from inside the process container by keeping the exhaust valve closed. The reaction step is performed without supplying the source gas into the process container by keeping the source gas valve closed, while supplying the reactive gas into the process container by setting the reactive gas valve open, and exhausting gas from inside the process container by setting the exhaust valve to gradually decrease its valve opening degree from a predetermined open state.

Abstract(Chinese):

分批CVD法重复包括吸附和反应步骤的循环以及除去残余气体的步骤。通过首先将源气体阀开启第一时间段，然后将源气体阀关闭而将源气体供应到处理容器中，同时将原料气体供给到处理容器中，同时通过保持反应气体阀关闭，并且不通过保持排气阀关闭从处理容器内部排出气体。通过将源气体阀保持关闭，同时通过将反应性气体阀打开而将反应性气体供给到处理容器中，并且通过将处理容器内的气体排出到处理容器内部来排出气体，从而进行反应步骤，排气阀从预定的打开状态逐渐减小阀开度。

Public/Granted literature

US20110021033A1 BATCH CVD METHOD AND APPARATUS FOR SEMICONDUCTOR PROCESS Public/Granted day:2011-01-27

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/469	......在半导体材料上形成绝缘层的，例如，用于掩膜的或应用光刻技术的（密封层入H01L21/56）以及这些层的后处理
H01L21/471	.......无机层（H01L21/475，H01L21/4757优先）
H01L21/473	........由氧化物或玻璃状氧化物或以氧化物为基础的玻璃组成的无机层