Invention Grant
- Patent Title: Microelectronic interconnect element with decreased conductor spacing
- Patent Title (中): 具有减小导体间距的微电子互连元件
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Application No.: US12459864Application Date: 2009-07-08
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Publication No.: US08461460B2Publication Date: 2013-06-11
- Inventor: Chang Myung Ryu , Kimitaka Endo , Belgacem Haba , Yoichi Kubota
- Applicant: Chang Myung Ryu , Kimitaka Endo , Belgacem Haba , Yoichi Kubota
- Applicant Address: US CA San Jose
- Assignee: Invensas Corporation
- Current Assignee: Invensas Corporation
- Current Assignee Address: US CA San Jose
- Agency: Lerner, David, Littenberg, Krumholz & Mentlik, LLP
- Main IPC: H05K1/03
- IPC: H05K1/03

Abstract:
A microelectronic interconnect element can include a plurality of first metal lines and a plurality of second metal lines interleaved with the first metal lines. Each of the first and second metal lines has a surface extending within the same reference plane. The first metal lines have surfaces above the reference plane and remote therefrom and the second metal lines have surfaces below the reference plane and remote therefrom. A dielectric layer can separate a metal line of the first metal lines from an adjacent metal line of the second metal lines.
Public/Granted literature
- US20100009554A1 Microelectronic interconnect element with decreased conductor spacing Public/Granted day:2010-01-14
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