Invention Grant
- Patent Title: Photodetector circuit, input device, and input/output device
- Patent Title (中): 光电检测器电路,输入设备和输入/输出设备
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Application No.: US13313539Application Date: 2011-12-07
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Publication No.: US08461590B2Publication Date: 2013-06-11
- Inventor: Hikaru Tamura , Yoshiyuki Kurokawa , Takayuki Ikeda
- Applicant: Hikaru Tamura , Yoshiyuki Kurokawa , Takayuki Ikeda
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JP2010-274697 20101209; JP2011-108272 20110513
- Main IPC: H01L29/04
- IPC: H01L29/04

Abstract:
An adverse effect of parasitic capacitance on optical data output from a photodetector circuit is suppressed. A photodetector circuit includes a photoelectric conversion element; a first field-effect transistor; a second field-effect transistor; a first conductive layer functioning as a gate of the first field-effect transistor; an insulating layer provided over the first conductive layer; a semiconductor layer overlapping with the first conductive layer with the insulating layer interposed therebetween; a second conductive layer electrically connected to the semiconductor layer; and a third conductive layer electrically connected to the semiconductor layer, whose pair of side surfaces facing each other overlaps with at least one conductive layer including the first conductive layer with the insulating layer interposed therebetween, and which functions as the other of the source and the drain of the first field-effect transistor.
Public/Granted literature
- US20120146027A1 PHOTODETECTOR CIRCUIT, INPUT DEVICE, AND INPUT/OUTPUT DEVICE Public/Granted day:2012-06-14
Information query
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