Invention Grant
- Patent Title: Semiconductor light emitting device having a reflective material with a side slant surface and method of manufacturing
- Patent Title (中): 具有具有侧面倾斜表面的反射材料和制造方法的半导体发光器件
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Application No.: US13162151Application Date: 2011-06-16
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Publication No.: US08461610B2Publication Date: 2013-06-11
- Inventor: Kosaburo Ito , Toshihiro Seko , Kazuhiko Ueno , Soji Owada
- Applicant: Kosaburo Ito , Toshihiro Seko , Kazuhiko Ueno , Soji Owada
- Applicant Address: JP Tokyo
- Assignee: Stanley Electric Co., Ltd.
- Current Assignee: Stanley Electric Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Kenealy Vaidya LLP
- Priority: JP2010-137365 20100616
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer located over at least one semiconductor light-emitting chip in order to emit various colored lights including white light. The semiconductor light-emitting device can include a base board, a frame located on the base board, the chip mounted on the base board, a transparent material layer located between the wavelength converting layer and a side surface of the chip so as to extend toward the wavelength converting layer, and a reflective material layer disposed at least between the frame and both side surfaces of the wavelength converting layer and the transparent material layer. The semiconductor light-emitting device can be configured to improve light-emitting efficiency of the chip by using the reflective material layer as a reflector, and therefore can emit a wavelength-converted light having a high light-emitting efficiency from a small light-emitting surface.
Public/Granted literature
- US20110309388A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD Public/Granted day:2011-12-22
Information query
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