Invention Grant
- Patent Title: Method and apparatus of forming bipolar transistor device
- Patent Title (中): 形成双极晶体管器件的方法和装置
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Application No.: US12720504Application Date: 2010-03-09
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Publication No.: US08461621B2Publication Date: 2013-06-11
- Inventor: Harry Hak-Lay Chuang , Lee-Wee Teo , Ming Zhu
- Applicant: Harry Hak-Lay Chuang , Lee-Wee Teo , Ming Zhu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L21/8249
Abstract:
The present disclosure provides a semiconductor device having a transistor. The transistor includes a substrate. The transistor includes a collector region that is formed in a portion of the substrate. The transistor includes a base region that is surrounded by the collector region. The transistor includes an emitter region that is surrounded by the based region. The transistor includes an isolation structure that is disposed adjacent the emitter region. The transistor includes a gate structure that is disposed over a portion of the emitter region and a portion of the isolation structure.
Public/Granted literature
- US20110220963A1 METHOD AND APPARATUS OF FORMING BIPOLAR TRANSISTOR DEVICE Public/Granted day:2011-09-15
Information query
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