Invention Grant
- Patent Title: Carrier mobility enhanced channel devices and method of manufacture
- Patent Title (中): 载波移动增强信道设备和制造方法
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Application No.: US13080352Application Date: 2011-04-05
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Publication No.: US08461625B2Publication Date: 2013-06-11
- Inventor: Kangguo Cheng , Haining S. Yang
- Applicant: Kangguo Cheng , Haining S. Yang
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Roberts Mlotkowski Safran & Cole, P.C.
- Agent Matthew C. Zehrer
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
An integrated circuit with stress enhanced channels, a design structure and a method of manufacturing the integrated circuit is provided. The method includes forming a dummy gate structure on a substrate and forming a trench in the dummy gate structure. The method further includes filling a portion of the trench with a strain inducing material and filling a remaining portion of the trench with gate material.
Public/Granted literature
- US20110180853A1 CARRIER MOBILITY ENHANCED CHANNEL DEVICES AND METHOD OF MANUFACTURE Public/Granted day:2011-07-28
Information query
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