Invention Grant
US08461646B2 Trench MOS barrier schottky (TMBS) having multiple floating gates
有权
具有多个浮动门的沟槽MOS势垒肖特基（TMBS）
- Patent Title: Trench MOS barrier schottky (TMBS) having multiple floating gates
- Patent Title (中): 具有多个浮动门的沟槽MOS势垒肖特基（TMBS）
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Application No.: US13021078Application Date: 2011-02-04
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Publication No.: US08461646B2Publication Date: 2013-06-11
- Inventor: Lung-Ching Kao
- Applicant: Lung-Ching Kao
- Applicant Address: US NY Hauppauge
- Assignee: Vishay General Semiconductor LLC
- Current Assignee: Vishay General Semiconductor LLC
- Current Assignee Address: US NY Hauppauge
- Agency: Mayer & Williams PC
- Agent Stuart H. Mayer; Karin L. Williams
- Main IPC: H01L29/88
- IPC: H01L29/88 ; H01L21/28
Abstract:
A semiconductor rectifier is provided which includes a semiconductor substrate having a first type of conductivity. An epitaxial layer is formed on the substrate. The epitaxial layer has the first type of conductivity and is more lightly doped than the substrate. A plurality of floating gates is formed in the epitaxial layer and a metal layer is disposed over the epitaxial layer to form a Schottky contact therebetween. A first electrode is formed over the metal layer and a second electrode is formed on a backside of the substrate.
Public/Granted literature
- US20120199902A1 TRENCH MOS BARRIER SCHOTTKY (TMBS) HAVING MULTIPLE FLOATING GATES Public/Granted day:2012-08-09
Information query
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