Invention Grant
US08461664B2 N- and p-channel field-effect transistors with single quantum well for complementary circuits
有权
具有用于互补电路的单量子阱的N沟道场效应晶体管和p沟道场效应晶体管
- Patent Title: N- and p-channel field-effect transistors with single quantum well for complementary circuits
- Patent Title (中): 具有用于互补电路的单量子阱的N沟道场效应晶体管和p沟道场效应晶体管
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Application No.: US13115453Application Date: 2011-05-25
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Publication No.: US08461664B2Publication Date: 2013-06-11
- Inventor: Brian R. Bennett , John Bradley Boos , Mario Ancona , James G. Champlain , Nicolas A Papanicolaou
- Applicant: Brian R. Bennett , John Bradley Boos , Mario Ancona , James G. Champlain , Nicolas A Papanicolaou
- Applicant Address: US DC Washington
- Assignee: The United States of America, as represented by the Secretary of the Navy
- Current Assignee: The United States of America, as represented by the Secretary of the Navy
- Current Assignee Address: US DC Washington
- Agent Amy L. Ressing; Joslyn Barritt
- Main IPC: H01L29/20
- IPC: H01L29/20
Abstract:
A complementary metal oxide semiconductor (CMOS) device in which a single InxGa1-xSb quantum well serves as both an n-channel and a p-channel in the same device and a method for making the same. The InxGa1-xSb layer is part of a heterostructure that includes a Te-delta doped AlyGa1-ySb layer above the InxGa1-xSb layer on a portion of the structure. The portion of the structure without the Te-delta doped AlyGa1-ySb barrier layer can be fabricated into a p-FET by the use of appropriate source, gate, and drain terminals, and the portion of the structure retaining the Te-delta doped AlyGa1-ySb layer can be fabricated into an n-FET so that the structure forms a CMOS device, wherein the single InxGa1-xSb quantum well serves as the transport channel for both the n-FET portion and the p-FET portion of the heterostructure.
Public/Granted literature
- US20110297916A1 N-and P-Channel Field-Effect Transistors with Single Quantum Well for Complementary Circuits Public/Granted day:2011-12-08
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