Invention Grant
- Patent Title: Semiconductor integrated circuit device
- Patent Title (中): 半导体集成电路器件
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Application No.: US13224649Application Date: 2011-09-02
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Publication No.: US08461697B2Publication Date: 2013-06-11
- Inventor: Mitsushi Nozoe
- Applicant: Mitsushi Nozoe
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2009-049030 20090303; JPPCT/JP2009/003383 20090717
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
In a semiconductor integrated circuit device, arrangement relationship of power source area I/O pads differs between a peripheral portion and a center portion of a gate region of a chip. That is, in two columns and two rows of the peripheral portion of the gate region, VDD area I/O pads connected to a high-voltage power source VDD and GND area I/O pads connected to a ground power source GND are alternately aligned and arranged both in a row direction and in a column direction. Moreover, in the center portion of the gate region, the same VDD area I/O pads or the same GND area I/O pads are successively aligned in the row direction, and the VDD area I/O pads and the GND area I/O pads are alternately aligned and arranged in the column direction.
Public/Granted literature
- US20110316174A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE Public/Granted day:2011-12-29
Information query
IPC分类: