Invention Grant
- Patent Title: Buffer bilayers for electronic devices
- Patent Title (中): 电子设备缓冲层双层
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Application No.: US12642093Application Date: 2009-12-18
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Publication No.: US08461758B2Publication Date: 2013-06-11
- Inventor: Che-Hsiung Hsu , Weiying Gao , Shiva Prakash
- Applicant: Che-Hsiung Hsu , Weiying Gao , Shiva Prakash
- Applicant Address: US DE Wilmington
- Assignee: E I Du Pont de Nemours and Company
- Current Assignee: E I Du Pont de Nemours and Company
- Current Assignee Address: US DE Wilmington
- Main IPC: H01L51/52
- IPC: H01L51/52 ; H01L51/50
Abstract:
The present invention relates to buffer bilayers, and their use in electronic devices. The bilayer has a first layer including (a) at least one electrically conductive polymer doped with at least one non-highly-fluorinated acid polymer and (b) at least one highly-fluorinated acid polymer, and a second layer including inorganic nanoparticles which are oxides or sulfides.
Public/Granted literature
- US20100187982A1 BUFFER BILAYERS FOR ELECTRONIC DEVICES Public/Granted day:2010-07-29
Information query
IPC分类:
