Invention Grant
- Patent Title: Circuit for generating boosted voltage and method for operating the same
- Patent Title (中): 用于产生升压电路的电路及其操作方法
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Application No.: US12898813Application Date: 2010-10-06
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Publication No.: US08461810B2Publication Date: 2013-06-11
- Inventor: Kyu-young Chung
- Applicant: Kyu-young Chung
- Applicant Address: KR Cheongju-si
- Assignee: MagnaChip Semiconductor, Ltd.
- Current Assignee: MagnaChip Semiconductor, Ltd.
- Current Assignee Address: KR Cheongju-si
- Agency: NSIP Law
- Priority: KR10-2009-0126071 20091217; KR10-2010-0035631 20100419
- Main IPC: G05F1/00
- IPC: G05F1/00
Abstract:
A boosted voltage generation circuit may include: a boosting circuit configured to boost an input voltage based on a boosting rate and output a boosted voltage, a boosting rate setting unit configured to receive a feedback on a level of the input voltage and set a boosting rate, and an input voltage level setting unit configured to set the level of the input voltage in response to a target level of the boosted voltage and the boosting rate.
Public/Granted literature
- US20110148384A1 CIRCUIT FOR GENERATING BOOSTED VOLTAGE AND METHOD FOR OPERATING THE SAME Public/Granted day:2011-06-23
Information query
IPC分类:
