Invention Grant
US08461812B2 Shunt regulator having over-voltage protection circuit and semiconductor device including the same
有权
具有过电压保护电路的分路稳压器和包括其的半导体器件
- Patent Title: Shunt regulator having over-voltage protection circuit and semiconductor device including the same
- Patent Title (中): 具有过电压保护电路的分路稳压器和包括其的半导体器件
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Application No.: US12327458Application Date: 2008-12-03
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Publication No.: US08461812B2Publication Date: 2013-06-11
- Inventor: Han-Su Kim , Joo-Hyun Jeong
- Applicant: Han-Su Kim , Joo-Hyun Jeong
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2007-0128313 20071211
- Main IPC: G05F1/613
- IPC: G05F1/613

Abstract:
A shunt regulator includes a control circuit, a bypass circuit and a protection circuit. The control circuit is coupled between a first node and a ground, and generates a gate control signal in response to a voltage of the first node and a reference voltage. The bypass circuit forms a first current path between the first node and the ground in response to the gate control signal. The protection circuit has an MOS transistor that is fully turned on in response to a current flowing through the bypass circuit, and forms a second current path between the first node and the ground. Therefore, the shunt regulator occupies a relatively small area in an integrated circuit.
Public/Granted literature
- US20090146624A1 SHUNT REGULATOR HAVING OVER-VOLTAGE PROTECTION CIRCUIT AND SEMICONDUCTOR DEVICE INCLUDING THE SAME Public/Granted day:2009-06-11
Information query
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