Invention Grant
- Patent Title: Switching device and semiconductor integrated circuit device including the same
- Patent Title (中): 开关器件和包括其的半导体集成电路器件
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Application No.: US13071093Application Date: 2011-03-24
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Publication No.: US08461904B2Publication Date: 2013-06-11
- Inventor: Tak-Yung Kim , Taewhan Kim
- Applicant: Tak-Yung Kim , Taewhan Kim
- Applicant Address: KR Suwon-si, Gyeonggi-do KR Seoul
- Assignee: Samsung Electronics Co., Ltd.,SNU R&DB Foundation
- Current Assignee: Samsung Electronics Co., Ltd.,SNU R&DB Foundation
- Current Assignee Address: KR Suwon-si, Gyeonggi-do KR Seoul
- Agency: Lee & Morse, P.C.
- Priority: KR10-2010-0026429 20100324
- Main IPC: H03B1/00
- IPC: H03B1/00 ; H03K3/00
Abstract:
A switching device includes a first switch disposed between a power source voltage and an intermediate node, the first switch forming a current path on the basis of an input signal, a second switch disposed between the intermediate node and a ground, the second switch forming a current path on the basis of a voltage of the intermediate node, and a transmission gate receiving the input signal, the transmission gate outputting the input signal on the basis of the voltage of the intermediate node.
Public/Granted literature
- US20110234285A1 SWITCHING DEVICE AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE INCLUDING THE SAME Public/Granted day:2011-09-29
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