Invention Grant
- Patent Title: Single gate pixel and operation method of single gate pixel
- Patent Title (中): 单门像素的单门像素和单栅像素的操作方法
-
Application No.: US12656092Application Date: 2010-01-15
-
Publication No.: US08462247B2Publication Date: 2013-06-11
- Inventor: Seong Jin Kim , Sang Wook Han
- Applicant: Seong Jin Kim , Sang Wook Han
- Applicant Address: KR Suwon-Si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si
- Agency: Staas & Halsey LLP
- Priority: KR10-2009-0069568 20090729
- Main IPC: H04N3/14
- IPC: H04N3/14 ; H04N5/232 ; H01L31/062 ; H01L27/00

Abstract:
A single gate pixel of an image sensor, architecture of the single gate pixel, and an operation method of the single gate pixel may be provided. The single gate pixel includes a first transfer unit to transfer a charge, generated by a light detector element, to an accumulation (ACC) node, a second transfer unit to transfer the charge, accumulated in the ACC node, to a Floating Diffusion (FD) node, a connection unit to connect the light detector element to a driving voltage, and a reset unit to reset a voltage of the FD node based on a reset control signal.
Public/Granted literature
- US20110025893A1 Single gate pixel and operation method of single gate pixel Public/Granted day:2011-02-03
Information query