Invention Grant
- Patent Title: Junction field effect transistor for voltage protection
- Patent Title (中): 结电场效应晶体管用于电压保护
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Application No.: US12880686Application Date: 2010-09-13
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Publication No.: US08462477B2Publication Date: 2013-06-11
- Inventor: Eric Modica , Edward J. Coyne , Derek F. Bowers
- Applicant: Eric Modica , Edward J. Coyne , Derek F. Bowers
- Applicant Address: US MA Norwood
- Assignee: Analog Devices, Inc.
- Current Assignee: Analog Devices, Inc.
- Current Assignee Address: US MA Norwood
- Agency: Knobbe, Martens, Olson & Bear, LLP
- Main IPC: H02H3/20
- IPC: H02H3/20 ; H02H3/24 ; H02H9/04

Abstract:
Apparatus and methods are disclosed, such as those involving a junction field effect transistor for voltage protection. One such apparatus includes a protection circuit including an input, an output, and a JFET. The JFET has a source electrically coupled to the input, and a drain electrically coupled to the output, wherein the JFET has a pinch-off voltage (Vp) of greater than 2 V in magnitude. The apparatus further includes an internal circuit having an input configured to receive a signal from the output of the protection circuit. The protection circuit provides protection over the internal circuit from overvoltage and/or undervoltage conditions while having a reduced size compared to a JFET having a Vp of smaller than 2 V in magnitude.
Public/Granted literature
- US20120063049A1 JUNCTION FIELD EFFECT TRANSISTOR FOR VOLTAGE PROTECTION Public/Granted day:2012-03-15
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