Invention Grant
- Patent Title: Heat sink with surface-formed vapor chamber base
- Patent Title (中): 散热表面形成蒸气室底座
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Application No.: US11742540Application Date: 2007-04-30
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Publication No.: US08462508B2Publication Date: 2013-06-11
- Inventor: Robert J. Lankston, II , Christopher G. Malone , Stephen D. Cromwell
- Applicant: Robert J. Lankston, II , Christopher G. Malone , Stephen D. Cromwell
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- Main IPC: H05K7/20
- IPC: H05K7/20
Abstract:
A heat sink comprises a vapor chamber base formed in a three-dimensional arrangement that mirrors topology of underlying structures on a substrate upon which the heat sink can be mounted, and at least one fin coupled to the vapor chamber base.
Public/Granted literature
- US20080266800A1 HEAT SINK WITH SURFACE-FORMED VAPOR CHAMBER BASE Public/Granted day:2008-10-30
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