Invention Grant
- Patent Title: Reading a flash memory by constrained decoding
- Patent Title (中): 通过约束解码读取闪存
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Application No.: US12645499Application Date: 2009-12-23
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Publication No.: US08464131B2Publication Date: 2013-06-11
- Inventor: Eran Sharon , Idan Alrod , Simon Litsyn
- Applicant: Eran Sharon , Idan Alrod , Simon Litsyn
- Applicant Address: IL Tel Aviv
- Assignee: Ramot At Tel Aviv University Ltd.
- Current Assignee: Ramot At Tel Aviv University Ltd.
- Current Assignee Address: IL Tel Aviv
- Agency: Alston & Bird LLP
- Main IPC: G06F11/00
- IPC: G06F11/00

Abstract:
To read memory cells that have been programmed to store an ECC codeword, with each cell storing a respective plurality of bits of the codeword, a respective value of an operational parameter such as a threshold voltage of each cell is measured. Each bit is assigned a respective metric, such as a LLR estimate of the bit, based at least in part on the respective value of the operational parameter of the bit's cell. The metrics are decoded with reference both to the ECC and to mutual constraints of the metrics within each cell that are independent of the ECC.
Public/Granted literature
- US20100192042A1 READING A FLASH MEMORY BY CONSTRAINED DECODING Public/Granted day:2010-07-29
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