Invention Grant
- Patent Title: Electron beam simulation corner correction for optical lithography
- Patent Title (中): 用于光学光刻的电子束模拟角修正
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Application No.: US12625466Application Date: 2009-11-24
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Publication No.: US08464185B2Publication Date: 2013-06-11
- Inventor: Yuri Granik
- Applicant: Yuri Granik
- Applicant Address: US OR Wilsonville
- Assignee: Mentor Graphics Corporation
- Current Assignee: Mentor Graphics Corporation
- Current Assignee Address: US OR Wilsonville
- Agency: Plumsea Law Group, LLC
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
Methods for approximating simulated contours are provided herein. With some implementations, a function that incorporates a Gaussian proximity kernel to approximate the electron beam exposure effects is used to simulate a printed image. Subsequently, one or more corners of the simulated printed image may be approximated by two or more straight edges. In various implementations, the number of straight edges used to approximate the corner as well as the orientation of the one or more straight edges is determined based upon the characteristics of the corner, such as, the corner having an obtuse angle larger than 135 degrees for example. With various implementations, two straight edges are used to approximate the corner, the orientation of the two straight edges being determined by a first point, a second point, and a shared corner point.
Public/Granted literature
- US20100269086A1 Electron Beam Simulation Corner Correction For Optical Lithpography Public/Granted day:2010-10-21
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