Invention Grant
- Patent Title: Providing electron beam proximity effect correction by simulating write operations of polygonal shapes
- Patent Title (中): 通过模拟多边形的写入操作提供电子束邻近效应校正
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Application No.: US13011165Application Date: 2011-01-21
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Publication No.: US08464186B2Publication Date: 2013-06-11
- Inventor: Hung-Chun Wang , Jeng-Horng Chen , Shy-Jay Lin , Chia-Ping Chiang , Cheng Kun Tsai , Wen-Chun Huang , Ru-Gun Liu
- Applicant: Hung-Chun Wang , Jeng-Horng Chen , Shy-Jay Lin , Chia-Ping Chiang , Cheng Kun Tsai , Wen-Chun Huang , Ru-Gun Liu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
A method for writing a design to a material using an electron beam includes assigning a first dosage to a first polygonal shape. The first polygonal shape occupies a first virtual layer and includes a first set of pixels. The method also includes simulating a first write operation using the first polygonal shape to create the design, discerning an error in the simulated first write operation, and assigning a second dosage to a second polygonal shape to reduce the error. The second polygonal shape occupies a second virtual layer. The method further includes creating a data structure that includes the first and second polygonal shapes and saving the data structure to a non-transitory computer-readable medium.
Public/Granted literature
- US20120192126A1 SYSTEMS AND METHODS PROVIDING ELECTRON BEAM PROXIMITY EFFECT CORRECTION Public/Granted day:2012-07-26
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