Invention Grant
- Patent Title: Machine and process for sequential multi-sublayer deposition of copper indium gallium diselenide compound semiconductors
- Patent Title (中): 铜铟镓硒化合物半导体的顺序多子层沉积的机器和工艺
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Application No.: US12701449Application Date: 2010-02-05
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Publication No.: US08465589B1Publication Date: 2013-06-18
- Inventor: Prem Nath , Venugopala R. Basava , Ajay Kumar Kalla , Peter Alex Shevchuk , Mohan S. Misra
- Applicant: Prem Nath , Venugopala R. Basava , Ajay Kumar Kalla , Peter Alex Shevchuk , Mohan S. Misra
- Applicant Address: US CO Thornton
- Assignee: Ascent Solar Technologies, Inc.
- Current Assignee: Ascent Solar Technologies, Inc.
- Current Assignee Address: US CO Thornton
- Agency: Lathrop & Gage LLP
- Main IPC: C23C16/00
- IPC: C23C16/00

Abstract:
A method of manufacture of CIGS photovoltaic cells and modules involves sequential deposition of copper indium gallium diselenide compounds in multiple thin sublayers to form a composite CIGS absorber layer of a desirable thickness greater than the thickness of each sublayer. In an embodiment, the method is adapted to roll-to-roll processing of CIGS PV cells. In an embodiment, the method is adapted to preparation of a CIGS absorber layer having graded composition through the layer. In a particular embodiment, the graded composition is enriched in copper at a base of the layer. In an embodiment, each CIGS sublayer is deposited by co-evaporation of copper, indium, gallium, and selenium which react in-situ to form CIGS.
Information query
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