Invention Grant
- Patent Title: Integration of bottom-up metal film deposition
- Patent Title (中): 整合自下而上的金属膜沉积
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Application No.: US13302520Application Date: 2011-11-22
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Publication No.: US08466063B2Publication Date: 2013-06-18
- Inventor: Simon Su-Horng Lin , Chi-Ming Yang , Chyi Shyuan Chern , Chin-Hsiang Lin
- Applicant: Simon Su-Horng Lin , Chi-Ming Yang , Chyi Shyuan Chern , Chin-Hsiang Lin
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman Ham & Berner, LLP
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
A method of depositing a metal film on a substrate with patterned features includes placing a substrate with patterned features into a photo-induced chemical vapor deposition (PI-CVD) process chamber. The method also includes depositing a metal film by PI-CVD to fill the patterned features from bottom up.
Public/Granted literature
- US20120064715A1 INTEGRATION OF BOTTOM-UP METAL FILM DEPOSITION Public/Granted day:2012-03-15
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