Invention Grant
- Patent Title: Semiconductor device, method of manufacturing the same, and electronic device including the semiconductor device
- Patent Title (中): 半导体装置及其制造方法以及包括半导体装置的电子装置
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Application No.: US13098165Application Date: 2011-04-29
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Publication No.: US08466472B2Publication Date: 2013-06-18
- Inventor: Moon Sang Lee , Sung Soo Park
- Applicant: Moon Sang Lee , Sung Soo Park
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2010-0130177 20101217
- Main IPC: H01L33/02
- IPC: H01L33/02
Abstract:
A semiconductor device, a method of manufacturing the semiconductor device, and an electronic device including the semiconductor device are provided. The semiconductor device includes a silicon substrate; a plurality of nanorods formed on the silicon substrate; and a nitride semiconductor layer formed on the silicon substrate and the plurality of nanorods, wherein a plurality of voids are formed between the silicon substrate and the nitride semiconductor in regions between the plurality of nanorods.
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